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Three junction gallium arsenide solar cell basic performance parameters
Product characteristics
The three-junction gallium arsenide solar cell uses germanium as the substrate, and is formed by three N / P structure sub-cells through the junction series, with high efficiency and strong radiation resistance.
application area
Low orbit aircraft, medium orbit aircraft, high orbit aircraft (nanosatellites, small satellites, commercial satellites, large satellites, drones, etc.)
base data
Gallium arsenide battery material: triple junction gallium arsenide (GaInP2 / GaAs / GeGe substrate
Size of gallium arsenide battery: (80.15 ± 0.05) mm * (40.15 ± 0.05) mm
Gallium arsenide battery area: 30.15c㎡
Thickness of gallium arsenide battery: 0.36±0.02mm
Gallium arsenide battery weight: (125 ± 12) mg / c ㎡
Abreflection membrane: TiOx / Al2O3
Glass cover plate: KFB120
Thickness of the cover plate: 120 ± 20 μ m
Interconnected sheet material: silver / silver plating
Thickness of the interconnection sheet: 20 / 25 μ m
Electrical performance data (AM 0,1SUN, 1353w / ㎡, 25℃)
Average open-circuit voltage Voc (mV): 2740
Average short-circuit current density of Joc (mA / c ㎡): 17.4
Maximum power voltage: Vm (mV): 2430
Maximum power current density of Joc (mA / c ㎡): 16.7
Average conversion efficiency of η base: 30%
Filling factor: 0.850
Irradiation intensity: (AM 0,1 SUN, 1353w / ㎡, 25℃)
The irradiation intensity was 1 * 1014e / cm2 5 * 1014e / cm2 1 * 1015e / cm2
Im/Imo 0.99 0.97 0.94
Vm/Vmo 0.96 0.93 0.92
Pm/Pmo 0.95 0.90 0.86
design value
Voltage Vl (mV) 2350; average current Ll ave (mA) 500; minimum current Ll min (mA) 480
Diode protection
Vforward(620mA) ≤1.0V ; Ireverse(4.0V) ≤50μA
Other parameters
Absorption coefficient 0.92; withstand tensile force 0.83N / mm2
temperature coefficient
The radiation intensity was BOL 1MeV, 5 * 1014e / cm2 1MeV, and 1 * 1015e / cm2
Jsc(μA/cm2/C) 11.0 10.0 13.0
Voc(mV/ C) -5.9 -6.1 -6.3
Jm(μA/cm2/C) 9.0 9.5 15.0
Vm(mV/ C) -6.0 -6.2 -6.5